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STTH12002TV
HIGH EFFICIENCY ULTRAFAST DIODE
MAIN PRODUCT CHARACTERISTICS IF(AV) VRRM Tj (max) VF (typ) trr (typ) FEATURES AND BENEFITS

2 x 60 A 200 V 150 C 0.73 V 35 ns
A1 A2
K1 K2
K1 A1 K2 A2
Suited for welding and high power equipment Very low forward losses Low recovery times High surge current capability Insulated: Insulating voltage = 2500 VRMS Capacitance < 45 pF Low leakage current
ISOTOP STTH12002TV1
DESCRIPTION Dual center tap rectifier suited for welding equipment and high power industrial application. Packaged in ISOTOP, this device is intended for use in the secondary rectification of power converters. ABSOLUTE RATINGS (limiting values, per diode) Symbol VRRM IF(RMS) IF(AV) IFSM Tstg Tj Parameter Repetitive peak reverse voltage RMS forward current Average forward current =0.5 Surge non repetitive forward current Storage temperature range Maximum operating junction temperature Tc = 105C Per diode Per diode Value 200 100 60 700 - 55 + 150 150 Unit V A A A C C
tp = 10 ms Sinusoidal per diode
February 2004 - Ed: 1
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STTH12002TV
THERMAL PARAMETERS Symbol Rth (j-c) Junction to case Parameter Per diode Per device Rth (j-c) Coupling Maximum 0.76 0.43 0.1 C/W Unit C/W
When the diodes 1 and 2 are used simultaneously: Tj (diode1) = P(diode1) x Rth(j-c) (per diode) + P(diode2) x Rth(c)
STATIC ELECTRICAL CHARACTERISTICS Symbol IR* Parameter Reverse leakage current Forward voltage drop Tests conditions Tj = 25C Tj = 125C Tj = 25C Tj = 25C Tj = 150C Tj = 150C
Pulse test: * tp = 5ms, < 2% ** tp = 380s, < 2%
Min.
Typ.
Max. 50
Unit A
VR = VRRM 50 IF = 60 A IF = 120 A IF = 60 A IF = 120 A 0.73
500 1.05 1.15 0.82 0.98 V
VF**
To evaluate the maximum conduction losses use the following equation : P = 0.66 x IF(AV) + 0.00266 IF2(RMS) DYNAMIC ELECTRICAL CHARACTERISTICS Symbol trr IRM tfr VFP Parameter Reverse recovery time Reverse recovery current Forward recovery time Forward recovery voltage Tj = 25C Tj = 125C Tj = 25C Tj = 25C Tests conditions IF = 1 A VR = 30V dIF/dt = 200 A/s IF = 60 A VR = 160V dIF/dt = 200 A/s IF = 60 A dIF/dt = 200 A/s VFR = 1.1 x VFmax IF = 60 A dIF/dt = 200 A/s 2.5 Min. Typ. 35 10.4 Max. 43 13.5 560 Unit ns A ns V
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STTH12002TV
Fig. 1: Peak current versus duty cycle (per diode).
IM(A)
400
Fig. 2-1: Forward voltage drop versus forward current (typical values, per diode).
IFM(A)
200
350 300
IM
T
180 160
=tp/T
250 200
tp
140 120 100
Tj=150C
P = 40W
P = 60W
150 100 50
80
P = 80W
60 40 20
Tj=25C
0 0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0
VFM(V)
0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2
0
Fig. 2-2: Forward voltage drop versus forward current (maximum values, per diode).
IFM(A)
200 180 160 140 120 100 80 60 40 20 0 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2 1.3 1.4
Tj=25C Tj=150C
Fig. 3: Relative variation of thermal impedance junction to case versus pulse duration.
Zth(j-c)/Rth(j-c)
1.0
Single pulse
VFM(V)
0.1 1.E-03 1.E-02
tp(s)
1.E-01 1.E+00 1.E+01
Fig. 4: Junction capacitance versus reverse voltage applied (typical values, per diode).
C(pF)
1000
F=1MHz VOSC=30mVRMS Tj=25C
Fig. 5: Reverse recovery charges versus dIF/dt (typical values, per diode).
Qrr(nC)
650 600 550 500 450 400 350 300 250 200 150 100
Tj=25C Tj=125C IF=60A VR=160V
VR(V)
100 0 50 100 150 200
50 0 10
dIF/dt(A/s)
100 1000
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Fig. 6: Reverse recovery time versus dIF/dt (typical values, per diode).
trr(ns)
100 90
Tj=125C IF=60A VR=160V
Fig. 7: Peak reverse recovery current versus dIF/dt (typical values, per diode).
IRM(A)
18 16 14 12 10
Tj=125C IF=60A VR=160V
80 70 60 50
8 40 30 20 10 0 10 100 1000
Tj=25C
6 4
Tj=25C
dIF/dt(A/s)
2
dIF/dt(A/s)
0 10 100 1000
Fig. 8: Dynamic parameters versus junction temperature.
Qrr;IRM[Tj]/Qrr;IRM[Tj=125C]
1.4 1.2 1.0 0.8 0.6 0.4 0.2
IRM IF=60A VR=160V
Qrr
Tj(C)
0.0 25 50 75 100 125 150
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STTH12002TV
PACKAGE MECHANICAL DATA ISOTOP DIMENSIONS REF. A A1 B
D D1 P1 B A1 A
Millimeters Min. 11.80 8.90 7.8 0.75 1.95 37.80 31.50 25.15 23.85 14.90 12.60 3.50 4.10 4.60 4.00 Max. 12.20 9.10 8.20 0.85 2.05 38.20 31.70 25.50 24.15 15.10 12.80 4.30 4.30 5.00 4.30
Inches Min. 0.465 0.350 0.307 0.030 0.077 1.488 1.240 0.990 0.939 0.587 0.496 0.138 0.161 0.181 0.157 Max. 0.480 0.358 0.323 0.033 0.081 1.504 1.248 1.004 0.951 0.594 0.504 0.169 0.169 0.197 0.69
C C2 D D1
/ OP E1 G1 F F1 E2 G2 E
E E1 E2 G G1 G2 F F1 P
G S
C2
C
24.80 typ.
0.976 typ.
Ordering code STTH12002TV1
Marking STTH12002TV1
Package ISOTOP
Weight
Base qty
Delivery mode Tube
27 g 10 (without screws) (with screws)
Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics.
The ST logo is a registered trademark of STMicroelectronics. All other names are the property of their respective owners. (c) 2004 STMicroelectronics - All rights reserved. STMicroelectronics GROUP OF COMPANIES Australia - Belgium - Brazil - Canada - China - Czech Republic - Finland - France - Germany Hong Kong - India - Israel - Italy - Japan - Malaysia - Malta - Morocco - Singapore - Spain Sweden - Switzerland - United Kingdom - United States www.st.com 5/5

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